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  Datasheet File OCR Text:
 SMD Type
High-Speed Double Diode Array BAW56S
Diodes
SOT-363
+0.1 1.3-0.1 0.65
Unit: mm
Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V
0.1max
+0.1 0.3-0.1 +0.1 2.1-0.1
+0.15 2.3-0.15
0.525
Features
0.36
Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 450 mA.
+0.05 0.1-0.02
Absolute Maximum Ratings Ta = 25
Parameter Per diode repetitive peak forward current continuous reverse voltage continuous forward current repetitive peak forward current VRRM VR IF IFRM square wave; Tj = 25 non-repetitive peak forward current IFSM t=1 s prior to surge; 4 1 0.5 350 -65 -65 +150 +150 255 K/W mW A single diode loaded; all diodes loaded; 85 75 250 100 450 V V mA mA mA Symbol Conditions Min Max Unit
t = 1 ms t=1s total power dissipation storage temperature junction temperature thermal resistance from junction to ambient Note 1. One or more diodes loaded. Ptot Tstg Tj Rth j-a Ts = 60 ; note 1
+0.05 0.95-0.05
+0.1 1.25-0.1
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1
SMD Type
BAW56S
Diodes
Electrical Characteristics Ta = 25
Parameter Symbol Conditions IF = 1 mA forward voltage VF IF = 10 mA IF = 50 mA IF = 150 mA VR = 25 V reverse current IR VR = 75 V VR = 25 V; Tj = 150 VR = 75 V; Tj = 150 diode capacitance reverse recovery time forward recovery voltage Cd trr Vfr VR = 0; f = 1 MHz; when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; 1.75 V Max 715 855 1 1.25 30 1 30 50 2 4 nA A A A pF ns mV Unit
when switched from IF = 10 mA; tr = 20 ns
Marking
Marking A1t
2
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